| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase in luminous efficiency and light extraction efficiency. <P>SOLUTION: A vertical light-emitting device includes a supporting layer 400, a first electrode 300 disposed on the supporting layer 400, a semiconductor structure 200 disposed on the first electrode 300 and having inclined side surfaces, a transparent conductive oxide layer 600 disposed above the semiconductor structure 200, and a second electrode 700 provided in a portion of the transparent conductive oxide layer 600. A nitrogen getter metal layer 500, which has reactive property with nitrogen in the semiconductor structure 200 and serves as an ohmic contact on the semiconductor structure 200, is interposed between the semiconductor structure 200 and the transparent conductive oxide layer 600. <P>COPYRIGHT: (C)2013,JPO&INPIT |
