发明名称 POWER SEMICONDUCTOR DEVICE
摘要 <p>Cell electrodes (150) are provided on a semiconductor substrate (130), said cell electrodes being provided in respective cell structures (CL). The cell electrodes (150) are grouped into groups (150a-150c) each of which includes two or more cell electrodes (150). Conductive members (160a-160c) are electrically connected to the groups (150a-150c), respectively. Each of the conductive members (160a-160c) has a using portion (UD) and a non-using portion (ND). The using portion (UD) has two or more conductive members (160a, 160b) that are electrically connected to each other. The non-using portion (ND) has at least one of the conductive members (160a-160c), and is electrically insulated from the using portion (UD).</p>
申请公布号 WO2013021684(A1) 申请公布日期 2013.02.14
申请号 WO2012JP59669 申请日期 2012.04.09
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;HAYASHI, HIDEKI;SHIGA, NOBUO 发明人 HAYASHI, HIDEKI;SHIGA, NOBUO
分类号 H01L29/47;H01L21/76;H01L21/82;H01L21/822;H01L25/07;H01L25/18;H01L27/04;H01L29/12;H01L29/78;H01L29/872 主分类号 H01L29/47
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