| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce power consumption of a 2Tr1C type semiconductor memory device. <P>SOLUTION: An absolute value of a threshold value of a readout transistor is made larger than a fluctuation range of a data potential of a bit line (or the fluctuation range of the data potential of the bit line is made smaller than the absolute value of the threshold value of the readout transistor). Thereby, a potential of a source line can be fixed and a potential fluctuation of a write word line can be made small. A potential of a readout word line is changed only during readout. The transistor having such a large absolute value of the threshold value is formed by using indium nitride having a high work function as a gate material. The use of the material having the high work function enhances a potential barrier of a gate insulator and suppresses a leak current, thereby improving charge retention characteristics. <P>COPYRIGHT: (C)2013,JPO&INPIT |
