| 发明名称 |
GALLIUM NITRIDE RECTIFYING DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride rectifying device having less time degradation and low loss (Baliga's performance index is 1.5 GW/cm<SP POS="POST">2</SP>and more). <P>SOLUTION: A gallium nitride rectifying deice 1 comprises a p-type gallium nitride-based semiconductor layer and an n-type gallium nitride-based semiconductor layer which form pn junction. A carrier trapping level density of the p-type gallium nitride-based semiconductor layer is 1×10<SP POS="POST">18</SP>cm<SP POS="POST">-3</SP>and less or a carrier trapping level density of the n-type gallium nitride-based semiconductor layer is 1×10<SP POS="POST">16</SP>cm<SP POS="POST">-3</SP>and less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013033913(A) |
申请公布日期 |
2013.02.14 |
| 申请号 |
JP20120068566 |
申请日期 |
2012.03.26 |
| 申请人 |
HITACHI CABLE LTD |
发明人 |
TSUCHIYA TADAYOSHI;KANEDA NAOKI;MISHIMA TOMOYOSHI |
| 分类号 |
H01L29/861;H01L21/205;H01L29/868 |
主分类号 |
H01L29/861 |
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