| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an on-voltage without reducing the breakdown resistance. <P>SOLUTION: A surface density of a hole stopper layer 19 is set to less than 4.0×10<SP POS="POST">12</SP>cm<SP POS="POST">-2</SP>. As a result, a depletion layer can punch through the hole stopper layer 19, thereby preventing a reduction in the breakdown resistance. <P>COPYRIGHT: (C)2013,JPO&INPIT |
