| 摘要 |
According to one embodiment, a semiconductor device includes a substrate, a gate electrode, a channel region, a source region and a drain region. The source region forms a first boundary with the channel region, and the drain region forms a second boundary with the channel region. A side of the gate electrode at the side of the source region has a plurality of convex portions extending along a gate length direction, a side of the gate electrode at the side of the drain region is parallel to a gate width direction, the first boundary and the second boundary have shapes corresponding to the side of the gate electrode at the side of the source region and the side of the gate electrode at the side of the drain region, and the length of the first boundary is more than the length of the second boundary.
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