| 发明名称 |
METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERROELECTRIC RANDOM ACCESS MEMORY (F-RAM) DEVICE STRUCTURE EMPLOYING REDUCED PROCESSING STEPS |
| 摘要 |
Disclosed is a novel non-volatile, ferroelectric random access memory (F-RAM) device and a method for fabricating a damascene self-aligned F-RAM device structure on a planar surface using a reduced number of masks and etching steps.
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| 申请公布号 |
US2013037897(A1) |
申请公布日期 |
2013.02.14 |
| 申请号 |
US201213569735 |
申请日期 |
2012.08.08 |
| 申请人 |
RAMTRON INTERNATIONAL CORPORATION;SUN SHAN;DAVENPORT THOMAS E.;CRONIN JOHN |
发明人 |
SUN SHAN;DAVENPORT THOMAS E.;CRONIN JOHN |
| 分类号 |
H01L21/02;H01L29/82 |
主分类号 |
H01L21/02 |
| 代理机构 |
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