发明名称 |
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT HAVING SUPERIOR CURRENT SPREADING EFFECT AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>Disclosed are a nitride semiconductor light-emitting element having a superior current spreading effect as a result of using a current spreading part containing current spreading impurities, and a method for manufacturing same. The nitride semiconductor light-emitting element according to the present invention comprises: an n-type nitride layer; a current spreading part, which is formed from nitride comprising current spreading impurities, and which is disposed on the n-type nitride layer; an activation layer disposed on the current spreading part; and a p-type nitride layer disposed on the activation layer, wherein the current spreading impurities comprise carbon (C).</p> |
申请公布号 |
WO2013022227(A2) |
申请公布日期 |
2013.02.14 |
申请号 |
WO2012KR06178 |
申请日期 |
2012.08.02 |
申请人 |
ILJIN MATERIALS CO., LTD.;CHOI, WON-JIN;PARK, JUNG-WON |
发明人 |
CHOI, WON-JIN;PARK, JUNG-WON |
分类号 |
H01L33/14 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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