摘要 |
<p>This solid-state image pickup device is provided with: an epitaxial layer (2); a plurality of pixel electrodes (11); a photoelectric conversion film (12), which is formed on the pixel electrodes (11), and converts inputted light into electric signals; a transparent electrode (13) formed on the photoelectric conversion film (12); n-type charge accumulating regions (14), which are formed in the epitaxial layer (2) by corresponding to respective pixel electrodes (11), are electrically connected to the corresponding pixel electrodes (11), respectively, and accumulate signal charges generated by photoelectric conversion in the photoelectric conversion film (12); p-type charge barrier regions (21) formed in the epitaxial layer (2) such that the regions are in contact with respective bottom portions of the charge accumulating regions (14); and n-type charge discharging regions (22) formed in the epitaxial layer (2) such that the regions are in contact with respective bottom portions of the charge barrier regions (21).</p> |
申请人 |
PANASONIC CORPORATION;MORI, MITSUYOSHI;SAKATA, YUSUKE;HIROSE, YUTAKA;MIYAGAWA, RYOHEI;DOI, HIROYUKI;TSUTSUI, MASAFUMI |
发明人 |
MORI, MITSUYOSHI;SAKATA, YUSUKE;HIROSE, YUTAKA;MIYAGAWA, RYOHEI;DOI, HIROYUKI;TSUTSUI, MASAFUMI |