| 摘要 |
<p>The purpose of the present invention is to provide a semiconductor device manufacturing method wherein, without deteriorating reliability, a low-resistance ohmic electrode can be formed by radiating laser light having lowest possible energy density. A metal thin film (22) is formed of metal nanoparticles (21) on one surface of a SiC substrate (11) in the thickness direction. Consequently, reflectance of the metal thin film (22) can be reduced without polishing the SiC substrate (11). Since an ohmic electrode is formed by radiating laser light to the metal thin film (22) having the reduced reflectance, laser light energy density necessary to form the ohmic electrode can be reduced. Furthermore, since the polishing is not performed to the SiC substrate (11), an increase of warpage of the SiC substrate (11) is eliminated by eliminating generation of deformed layer due to the process, and reliability of the semiconductor device is prevented from being deteriorated.</p> |
