GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor element including a p-type contact layer without destroy in crystallinity and having a comparatively small contact resistance and comparatively high carrier concentration, and provide a manufacturing method of the group III nitride semiconductor element.

SOLUTION: A group III nitride semiconductor element comprises: a contact layer 25a provided on a luminescent layer 17; a contact layer 25b provided on the contact layer 25a and directly contacting the contact layer 25a; and an electrode 37 provided on the contact layer 25b and directly contacting the contact layer 25b. The contact layer 25a and the contact layer 25b are composed of the same p-type gallium nitride-based semiconductors. A p-type dopant concentration of the contact layer 25a is lower than a p-type dopant concentration of the contact layer 25b. A boundary face J1 between the contact layer 25a and the contact layer 25b inclines at an angle of 50 degrees and over to less than 130 degrees with respect to a surface Sc orthogonal to a reference axis Cx extending along a c axis. A film thickness of the contact layer 25b is 20 nm and under.

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