| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing circuit malfunction. <P>SOLUTION: At an outer periphery of a semiconductor element that constitutes a low-potential reference circuit part LV and a high-potential reference circuit part HV and is insulated and isolated, for example, an n-type guard ring 42c is formed. Further, in an n<SP POS="POST">-</SP>-type layer 42a composed of an active layer 2c, a p-type well 42d is formed, and the semiconductor element is formed in the p-type well 42d. A line connected to an external power-supply 61 is divided into a power-supply line and a guard-ring terminal fixing line, and a resistor 63 is provided in the guard-ring fixing line through which a current of the power-supply line does not flow, thereby achieving a circuit configuration in which a bypass capacitor 64 may not be a discrete part. <P>COPYRIGHT: (C)2013,JPO&INPIT |
