NON-VOLATILE MEMORY DEVICE WITH CONDUCTIVE SIDEWALL SPACERS AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory device in which degradation of reliability is improved when conventional nitride-film sidewalls are used as a charge trap medium.

SOLUTION: A non-volatile memory device includes: a gate insulating film 22A on a semiconductor substrate 21; a gate 100 including a sequential stack of a first electrode film 23, a second electrode film 24, and a hard-mask film 25 on the gate insulating film; a pair of reoxidation sidewall spacers 27 formed on both sidewalls of the first electrode film 23 and the second electrode film 24 of the gate; a pair of sidewall spacers 28A formed on both sidewalls of the reoxidation sidewall spacers and the hard-mask film 25 of the gate 100; a pair of conductive sidewall spacers 29B formed on the pair of sidewall spacers 28A and capturing and emitting charges; a pair of LDD regions 26 formed in the semiconductor substrate 21; and source/drain regions 30 formed in the semiconductor substrate 21. The conductive sidewall spacers 29B have height lower than that of the gate 100 and the sidewall spacers 28A.

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