发明名称 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
摘要 <P>PROBLEM TO BE SOLVED: To prevent generation of an earth fault of a reactor used for production of polycrystalline silicon by the Siemens method. <P>SOLUTION: When preparing for a deposition reaction of a subsequent batch of polycrystalline silicon after a preceding batch, an insulation resistance value R<SB POS="POST">0</SB>used as a reference for determining whether the periphery of an electrode is cleaned sufficiently or not is set (S101), and after cleaning of the periphery of the electrode, insulation resistance measurement between the electrode and a base plate is performed (S102). The insulation resistance value R is compared with the reference value R<SB POS="POST">0</SB>, and when R is R<SB POS="POST">0</SB>or more (S103: Yes), it is determined that the periphery of the electrode is cleaned sufficiently, and shift to the next step (for example, a deposition reaction step of the subsequent batch of polycrystalline silicon) is allowed (S104). On the other hand, when R is lower than R<SB POS="POST">0</SB>(S103: No), it is determined that the periphery of the electrode is not cleaned sufficiently, and cleaning and drying of the furnace internal (especially an insulation member provided between the electrode and the base plate) are performed (S105). Then, after returning to step S102, following steps are performed. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013032236(A) 申请公布日期 2013.02.14
申请号 JP20110168271 申请日期 2011.08.01
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 NAGAI NAOKI;TANAKA HIDEJI
分类号 C01B33/03 主分类号 C01B33/03
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