发明名称 THIN FILM TRANSISTOR, METHOD FABRICATING THEREOF, LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 A thin-film transistor array substrate and a fabrication method thereof according to an embodiment of the present invention are disclosed to form an interlayer insulating layer, thereby reducing a failure occurred during the process subsequent to a gate electrode. The thin-film transistor disclosed according to the present invention may include a substrate, a gate electrode formed on the substrate, a planarized insulating layer formed at a lateral surface portion of the gate electrode and at an upper portion of the substrate, a gate insulating layer formed on the planarized insulating layer containing an upper portion of the gate electrode, an active layer formed at an upper portion of the planarized insulating layer located at an upper side of the gate electrode, and a source electrode and a drain electrode formed on the active layer and separated from each other based on a channel region.
申请公布号 US2013037814(A1) 申请公布日期 2013.02.14
申请号 US201213564402 申请日期 2012.08.01
申请人 LG DISPLAY CO., LTD.,;OH TAE-YOUNG;CHO HEUNG-LYUL;JUNG JI-EUN 发明人 OH TAE-YOUNG;CHO HEUNG-LYUL;JUNG JI-EUN
分类号 H01L29/786;H01L21/336;H01L33/08 主分类号 H01L29/786
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