发明名称 Semiconductor Device and a Method for Forming a Semiconductor Device
摘要 A semiconductor device having a semiconductor die is provided. The semiconductor die includes a main horizontal surface, an outer edge, an active area, and a peripheral area. The peripheral area includes a dielectric structure surrounding the active area and extending from the main horizontal surface into the semiconductor die. The dielectric structure includes, in a horizontal cross-section, at least one substantially L-shaped portion that is inclined against the outer edge. Further, a method for forming a semiconductor device is provided.
申请公布号 US2013037906(A1) 申请公布日期 2013.02.14
申请号 US201113205759 申请日期 2011.08.09
申请人 INFINEON TECHNOLOGIES AUSTRIA AG;HIRLER FRANZ;MAUDER ANTON;SCHULZE HANS-JOACHIM 发明人 HIRLER FRANZ;MAUDER ANTON;SCHULZE HANS-JOACHIM
分类号 H01L29/06;H01L21/762 主分类号 H01L29/06
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