发明名称 HIGH DENSITY TRACE FORMATION METHOD BY LASER ABLATION
摘要 A method for making a microelectronic substrate includes forming a pattern of a selected metallic layer of an in-process unit using laser ablation such that the pattern corresponds to desired locations for conductive features. Conductive material is than added to the in-process unit by a process that uses the pattern to concentrate application of the conductive material to the in-process unit such that the conductive material forms conductive features of the substrate according to the pattern. The step forming a pattern of a selected metallic layer of an in-process unit using laser ablation can includes the use of a UV laser, a CO2 or an excimer laser.
申请公布号 US2013037312(A1) 申请公布日期 2013.02.14
申请号 US201113207059 申请日期 2011.08.10
申请人 INVENSAS CORPORATION;MASUDA NORIHITO;SATO HIROAKI 发明人 MASUDA NORIHITO;SATO HIROAKI
分类号 H05K1/09;B05D3/06;B32B38/08;B32B38/10;H05K1/00;H05K1/11;H05K1/18 主分类号 H05K1/09
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