发明名称 |
HIGH DENSITY TRACE FORMATION METHOD BY LASER ABLATION |
摘要 |
A method for making a microelectronic substrate includes forming a pattern of a selected metallic layer of an in-process unit using laser ablation such that the pattern corresponds to desired locations for conductive features. Conductive material is than added to the in-process unit by a process that uses the pattern to concentrate application of the conductive material to the in-process unit such that the conductive material forms conductive features of the substrate according to the pattern. The step forming a pattern of a selected metallic layer of an in-process unit using laser ablation can includes the use of a UV laser, a CO2 or an excimer laser.
|
申请公布号 |
US2013037312(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201113207059 |
申请日期 |
2011.08.10 |
申请人 |
INVENSAS CORPORATION;MASUDA NORIHITO;SATO HIROAKI |
发明人 |
MASUDA NORIHITO;SATO HIROAKI |
分类号 |
H05K1/09;B05D3/06;B32B38/08;B32B38/10;H05K1/00;H05K1/11;H05K1/18 |
主分类号 |
H05K1/09 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|