发明名称 THIN FILM STRUCTURE FOR HIGH DENSITY INDUCTORS AND REDISTRIBUTION IN WAFER LEVEL PACKAGING
摘要 Disclosed is a package that includes a wafer substrate and a metal stack seed layer. The metal stack seed layer includes a titanium thin film outer layer. A resist layer is provided in contact with the titanium thin film outer layer of the metal stack seed layer, the resist layer forming circuitry. A method for manufacturing a package is further disclosed. A metal stack seed layer having a titanium thin film outer layer is formed. A resist layer is formed so as to be in contact with the titanium thin film outer layer of the metal stack seed layer, and circuitry is formed from the resist layer.
申请公布号 WO2013023157(A2) 申请公布日期 2013.02.14
申请号 WO2012US50382 申请日期 2012.08.10
申请人 FLIPCHIP INTERNATIONAL, LLC;FORCIER, ROBERT;SCOTT, DOUGLAS 发明人 FORCIER, ROBERT;SCOTT, DOUGLAS
分类号 H01L25/16;H01L23/64 主分类号 H01L25/16
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