SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Provided are a semiconductor device and a manufacturing method thereof. The method comprises: providing a semiconductor substrate (1) of a first semiconductor material, and a gate structure located on the semiconductor substrate (1), the gate structure comprising a gate dielectric layer (130), a gate conductor layer (132), a gate cover layer (134) and a side wall (136); performing inclined ion implantation, and forming a pre-amorphization area (122) in a channel below the gate structure; forming a stress layer (124) on the semiconductor substrate (1); and crystallizing, through annealing, the pre-amorphization area (122) to form a doped crystalline area, thereby forming a lattice dislocation line (150) that generates a channel stress in the channel, a certain angle being formed between the lattice dislocation line (150) and the channel.