发明名称 |
AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD |
摘要 |
<p>This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel area of the substrate, and a first metal layer on the dielectric layer. Hydrogen ions are implanted with a plasma-immersion ion implantation process in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The hydrogen ion implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.</p> |
申请公布号 |
WO2013022643(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
WO2012US48878 |
申请日期 |
2012.07.30 |
申请人 |
QUALCOMM MEMS TECHNOLOGIES, INC.;PAN, YAOLING;KIM, CHEONHONG;CHANG, TALLIS YOUNG |
发明人 |
PAN, YAOLING;KIM, CHEONHONG;CHANG, TALLIS YOUNG |
分类号 |
H01L29/66;H01L29/786 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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