发明名称 |
Memory Array Including Magnetic Random Access Memory Cells and Oblique Field Lines |
摘要 |
A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines oriented in a second direction different from the first direction, the first plurality of field lines being spaced such that only a corresponding first one of the first plurality of MRAM cells is configurable by each of the first plurality of field lines. The device includes a second plurality of field lines oriented in a third direction different from the first direction and the second direction, the second plurality of field lines being spaced such that only a corresponding second one of the first plurality of MRAM cells is configurable by each of the second plurality of field lines.
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申请公布号 |
US2013037898(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201213572566 |
申请日期 |
2012.08.10 |
申请人 |
CROCUS TECHNOLOGY, INC.;CAMBOU BERTRAND F.;LEE DOUGLAS J.;TETHER ANTHONY J.;HOBERMAN BARRY |
发明人 |
CAMBOU BERTRAND F.;LEE DOUGLAS J.;TETHER ANTHONY J.;HOBERMAN BARRY |
分类号 |
H01L27/22 |
主分类号 |
H01L27/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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