发明名称 THREE DIMENSIONALLY INTEGRATED SEMICONDUCTOR SYSTEMS INCLUDING PHOTOACTIVE DEVICES AND SEMICONDUCTOR-ON-INSULATOR SUBSTRATES, AND METHODS OF FORMING SUCH THREE DIMENSIONALLY INTEGRATED SEMICONDUCTOR SYSTEMS
摘要 Three dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling an waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter.
申请公布号 US2013039615(A1) 申请公布日期 2013.02.14
申请号 US201113206299 申请日期 2011.08.09
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;NGUYEN BICH-YEN;SADAKA MARIAM 发明人 NGUYEN BICH-YEN;SADAKA MARIAM
分类号 G02B6/12;H01L31/12;H01L31/18;H01L33/58 主分类号 G02B6/12
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