| 发明名称 |
THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor display panel which can improve characteristics of a thin film transistor using an oxide semiconductor, and a manufacturing method of the same. <P>SOLUTION: A thin film transistor display panel according to an embodiment of the present invention comprises: a gate wiring layer arranged on a substrate; an oxide semiconductor layer arranged on the gate wiring layer; and a data wiring layer arranged on the oxide semiconductor layer and crossing the gate wiring layer. The data wiring layer includes a main wiring layer containing copper and a capping layer containing a copper alloy and arranged on the main wiring layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013033927(A) |
申请公布日期 |
2013.02.14 |
| 申请号 |
JP20120105272 |
申请日期 |
2012.05.02 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM DO-HYUN;KHANG YOON-HO;LEE DONG HOON;PARK SANG-HO;YU SE-HWAN;KIM CHEOL-KYU;YI YONG SU;CHO SEIKO;CHANG CHONG SUP;KIM DONG JO;YI JEONG-GYU |
| 分类号 |
H01L29/786;G02F1/1368;G09F9/00;G09F9/30;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/532;H01L29/417 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
