| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage circuit having higher freedom in circuitry, and a sense amplifier suited to the storage circuit. <P>SOLUTION: The storage circuit includes a reading circuit which includes a first MOSFET P10 and a second MOSFET P9 which are p types and in which the source of the fist MOSFET P10 is connected to a power supply voltage VDD, a reading signal is commonly input to the gate from one transfer transistor N3 of a plurality of memory cells, and the drain and a second bit line BL are connected via the second MOSFET P9. During data reading, a first bit line BLi and the second bit line BL are precharged to predetermined voltages V<SB POS="POST">P2</SB>and V<SB POS="POST">P1</SB>, and the voltage reduction of the second bit line BL when the second MOSFET P9 is turned ON is detected by the sense amplifier, thereby reading data. <P>COPYRIGHT: (C)2013,JPO&INPIT |
