发明名称 |
Backside Surface Treatment of Semiconductor Chips |
摘要 |
A method includes performing a grinding to a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate has a back surface. A treatment is then performed on the back surface using a method selected from the group consisting essentially of a dry treatment and a plasma treatment. Process gases that are used in the treatment include oxygen (O2). The plasma treatment is performed without vertical bias in a direction perpendicular to the back surface.
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申请公布号 |
US2013040446(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201113205179 |
申请日期 |
2011.08.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;LAI CHIH-YU;WU CHENG-TA;HSU KAI-CHUN;TU YEUR-LUEN;WANG CHING-CHUN;TSAI CHIA-SHIUNG |
发明人 |
LAI CHIH-YU;WU CHENG-TA;HSU KAI-CHUN;TU YEUR-LUEN;WANG CHING-CHUN;TSAI CHIA-SHIUNG |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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