发明名称 |
VAPOR-PHASE GROWTH METHOD FOR SEMICONDUCTOR FILM |
摘要 |
A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 μmol per minute per 1 cm2 of the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.
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申请公布号 |
US2013040441(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201013642973 |
申请日期 |
2010.12.08 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA;ITO TAKAHIRO;KOZAWA TAKAHIRO;NAKASHIMA KENJI;JUN KEEYOUNG |
发明人 |
ITO TAKAHIRO;KOZAWA TAKAHIRO;NAKASHIMA KENJI;JUN KEEYOUNG |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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