Optoelectronic semiconductor chip e.g. thin-film LED chip, for converting electrical power into e.g. pulsed light emission to transfer data, has semiconductor body whose n-type contact layer contains transparent conductive oxide layer

摘要

The chip (10) has a semiconductor body (1) made of semiconductor material, a p-type contact layer (21a) and an n-type contact layer (2). The body comprises an active layer (1a), which is arranged between p- and n-type sides (1c, 1b) of the body, for generating radiation. The p-type contact layer electrically contacts the p-type side. The n-type contact layer electrically contacts the n-type side. The n-type contact layer contains a transparent conductive oxide (TCO) layer, which is arranged between the n-type side and a silver mirror layer.