| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to increase a contact area by preventing a spacer from being damaged in a contact hole forming process using a liner layer. CONSTITUTION: A plurality of conductive patterns(35) are formed on a substrate. A spacer(36) is formed on both sides of the conductive pattern. A liner layer(37) is formed on the conductive pattern with the spacer. An interlayer dielectric layer is formed on the liner layer. A contact hole is formed by selectively etching the interlayer dielectric layer and the liner layer.</p> |
