| 发明名称 |
Method of Patterning NAND Strings Using Perpendicular SRAF |
| 摘要 |
A lithography mask includes a plurality of patterning features formed on a mask substrate and a first plurality of sub-resolution assist features (SRAFs) formed substantially perpendicular to the patterning features on the mask substrate.
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| 申请公布号 |
US2013040232(A1) |
申请公布日期 |
2013.02.14 |
| 申请号 |
US201213652914 |
申请日期 |
2012.10.16 |
| 申请人 |
SANDISK TECHNOLOGIES INC.;SANDISK TECHNOLOGIES INC. |
发明人 |
HUANG CHEN-CHE;WANG CHUN-MING;HIGASHITANI MASAAKI |
| 分类号 |
G03F1/42 |
主分类号 |
G03F1/42 |
| 代理机构 |
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代理人 |
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