SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE

摘要

[Problem] To provide a resist underlayer film-forming composition for lithography. [Solution] A silicon-containing resist underlayer film-forming composition having a sulfone structure and including as a silane a hydrolyzable organosilane, a hydrolysate thereof, or a hydrolytic condensate thereof, said silane fulfilling formula (1): [(R1)aSi(R2)(3-a)]b(R3). [In formula (1), R3 is an organic group that includes a sulfonyl group and a light-absorbing group and is bonded with an Si atom by an Si-C bond; R1 is an organic group having an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an alkoxy aryl group, an acyloxy aryl group, an isocyanurate group, a hydroxy group, a cyclic amino group, or a cyano group, or is an organic group that is a combination of these and is bonded with an Si atom by an Si-C bond; R2 is an alkoxy group, an acyloxy group, or a halogen group; a indicates an integer between 0 and 2; and b indicates an integer between 1 and 3.]