| 摘要 |
An epitaxial wafer manufacturing device (1), which deposits and grows epitaxial layers on the surfaces of heated wafers (W) while supplying a raw material gas inside a chamber, has a shield (12), which is positioned in close proximity to the bottom of a top plate (3) in such a manner as to prevent deposits from being deposited on the bottom of the top plate (3). The shield (12) is detachably attached inside the chamber, and has an opening (13), in a central section, that forces a gas inlet (9) to face inside of a reaction space (K) , and is divided into a plurality of ring plates (16, 17, 18) that are concentric around the opening (13). |
