| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate manufacturing method which simply and effectively reduces a decrease in breakdown voltage of a nitride semiconductor. <P>SOLUTION: A nitride semiconductor substrate manufacturing method comprises: a process of forming a silicon nitride layer on one principal surface of a silicon single crystal substrate; a process of forming an intermediate layer composed of a nitride semiconductor on the silicon nitride layer; and a process of forming an active layer composed of a nitride semiconductor on the intermediate layer. The process of forming the silicon nitride layer includes: a first step of raising a temperature from a room temperature to an achieving temperature of 900°C or higher to 1000°C or lower in a gas atmosphere containing a nitrogen gas of 90 vol% or more to 100 vol% or less and the rest containing an inert gas other than the nitrogen gas; a second step of keeping the gas atmosphere and the achieving temperature for a predetermined time; and a third step of changing the gas atmosphere to a reducing gas containing atmosphere and keeping the reducing gas containing atmosphere for a predetermined time. <P>COPYRIGHT: (C)2013,JPO&INPIT |
