| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer processing method having high thickness accuracy, which can stably hold a semiconductor wafer when transferring the semiconductor wafer or when performing processing such as backgrinding, and which can detach the semiconductor wafer without damage after required processing is performed. <P>SOLUTION: A semiconductor wafer processing method according to the present invention comprises: a process of detachably fixing a semiconductor wafer on a flexible glass substrate having a thickness of 300-1000 μm, and a compressive stress layer chemically strengthened by ion exchange treatment by one or more kinds of ions selected from Na ions and K ions, and a maximum bending angle of 30 degrees or larger; a process of performing processing on the semiconductor wafer; a process of fixing the semiconductor wafer side by support means; and a process of curving the flexible glass substrate and detaching it from the semiconductor wafer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
