| 摘要 |
A light emitting transistor of the present invention has a light emitting layer, both a source electrode and a drain electrode both of which are connected with the light emitting layer electrically, an insulation layer arranged on the light emitting layer, a gate electrode arranged on the insulation layer. The light emitting layer is made from an organic semiconductor material. The light emitting transistor has also a periodic structure and the gate electrode to which an AC voltage is applied. And the emission intensity can be high, and width of the emission spectrum can be reduced. In addition, it is easy to control the amplitude of the emitting light and the width of emission spectrum reproducibly.
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