发明名称 |
METHOD FOR OPERATING MEMORY CONTROLLER, AND MEMORY SYSTEM HAVING THE SAME |
摘要 |
PURPOSE: An operating method of a memory controller and a memory system including the memory controller are provided to reduce the maximum number of times of read retry operation for a storage area by calculating a time difference between a read operation and a program operation for the storage area of a nonvolatile memory. CONSTITUTION: An RTC(Real Time Clock) circuit(30-2) generates first and second RTC values in response to a clock signal. A microprocessor(30-1) controls a program for a nonvolatile memory of the first RTC value indicating a first view point. When read operation is performed, the microprocessor calculates a difference by using the first RTC value read from the nonvolatile memory and the second RTC value indicating a second view point. When read retry operation is performed, the microprocessor controls the reduction of the maximum number of times of the read retry operation by using the difference. |
申请公布号 |
KR20130015643(A) |
申请公布日期 |
2013.02.14 |
申请号 |
KR20110077748 |
申请日期 |
2011.08.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HYUN SEOK;BAE, SUNG HWAN;BAEK, JONG NAM;LEE, SANG HOON;KIM, SUNG BIN |
分类号 |
G06F13/16;G06F12/00;G11C16/06;G11C16/32 |
主分类号 |
G06F13/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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