发明名称 METHOD FOR OPERATING MEMORY CONTROLLER, AND MEMORY SYSTEM HAVING THE SAME
摘要 PURPOSE: An operating method of a memory controller and a memory system including the memory controller are provided to reduce the maximum number of times of read retry operation for a storage area by calculating a time difference between a read operation and a program operation for the storage area of a nonvolatile memory. CONSTITUTION: An RTC(Real Time Clock) circuit(30-2) generates first and second RTC values in response to a clock signal. A microprocessor(30-1) controls a program for a nonvolatile memory of the first RTC value indicating a first view point. When read operation is performed, the microprocessor calculates a difference by using the first RTC value read from the nonvolatile memory and the second RTC value indicating a second view point. When read retry operation is performed, the microprocessor controls the reduction of the maximum number of times of the read retry operation by using the difference.
申请公布号 KR20130015643(A) 申请公布日期 2013.02.14
申请号 KR20110077748 申请日期 2011.08.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HYUN SEOK;BAE, SUNG HWAN;BAEK, JONG NAM;LEE, SANG HOON;KIM, SUNG BIN
分类号 G06F13/16;G06F12/00;G11C16/06;G11C16/32 主分类号 G06F13/16
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