METHOD FOR WRITING TO RESISTANCE CHANGE NONVOLATILE MEMORY ELEMENT
摘要
<p>Provided is a method for writing to a resistance change nonvolatile memory element whereby a resistance change fault is corrected and an operation window is secured so that a resistance change operation can be stably maintained. When a resistance change fault occurs in a resistance change nonvolatile memory element, a recovery voltage pulse is applied to the resistance change nonvolatile memory element at least one time, the recovery voltage pulse being constituted by two pulses that are a first recovery voltage pulse (14) as a high-resistance voltage pulse having a larger amplitude than a normal high-resistance voltage pulse and a low-resistance voltage pulse, and a second recovery voltage pulse (15) as a low-resistance voltage pulse that follows the first recovery voltage pulse (14).</p>
