SCHOTTKY DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a Schottky diode and a method of manufacturing the same.

SOLUTION: A Schottky diode of the present invention comprises: a first metal layer; a semiconductor layer; and a second metal layer. The first metal layer and the second metal layer are disposed spaced apart from each other and are electrically connected to the semiconductor layer. The junction method between the first metal layer and the semiconductor layer is Schottky contact. The junction method between the second metal layer and the semiconductor layer is ohmic contact. The semiconductor layer is composed of a polymer insulating material and a plurality of carbon nano-tubes dispersed in the polymer insulating material.

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