| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of suppressing an increase of SRAM area and holding data while reducing sub-threshold current. <P>SOLUTION: A semiconductor storage device is configured to comprise: a memory cell (3); digit lines (DT0, DB0) for transferring data of the memory cell (3); write-in circuits (17, 18) for writing-in the data to the memory cell (3); control circuits (9, 11) for controlling operation of the write-in circuit (17, 18); a source line (SL) connected to a source of a driver transistor of the memory cell (3); and switching circuits (21, 22) provided between the digit lines (DT0, DB0) and the source line (SL). Then, the write-in circuit (17, 18) is actuated as a diode between a ground line supplying GND voltage and the source line (SL). <P>COPYRIGHT: (C)2013,JPO&INPIT |
