| 摘要 |
The present invention discloses a TFT pixel unit having a scan line, a first isolation layer, a data line, a source section, a semiconductor layer, a drain section and a pixel electrode. The first isolation layer is mounted on the scan line and covers an inner surface of the scan line. The data line and the scan line are isolatedly crossed with each other and define a pixel area. The drain section extends from a side of the data line and disposed on the first isolation layer. The semiconductor layer is mounted on a top surface of the drain section. The source section is mounted on a top surface of the semiconductor layer. The drain section, the semiconductor layer and the source section are adjacent to the inner surface of the scan line. The pixel electrode is mounted in the pixel area and connected to the source section. The date line, the drain section, the semiconductor layer and the source section construct a TFT switch having a vertically-stacked structure, which reduces the loss of aperture ratio.
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