METHOD FOR WRITING TO RESISTANCE CHANGE NONVOLATILE MEMORY ELEMENT

摘要

A method for writing to a resistance change nonvolatile memory element comprises a step of placing a variable resistance layer in a low resistance state by applying a first negative voltage (-V1) to a second electrode with reference to a first electrode and a step of placing the resistance change layer in a high resistance state. The step of placing the resistance change layer in a high resistance state comprises a step of applying a second positive voltage (V2) to the second electrode with reference to the first electrode and a step of placing the resistance change layer in the high resistance state by applying to the second electrode a negative third voltage (-V3) that is smaller than the absolute value of a negative threshold voltage for changing the resistance change layer from the high resistance state to the low resistance state with reference to the first electrode after a step of applying the second positive voltage (V2) to the second electrode with reference to the first electrode.