| 摘要 |
<p>There is provided a pixel (100) for an image sensor, wherein the pixel (100) is based on a doped substrate (110) on which a lightly doped epitaxial layer (120) is provided. A photosensitive structure (130) and an isolating reversely biased well (140) are defined in the epitaxial layer, and the photosensitive structure (130) is encapsulated in the reversely biased well (140). Alternatively, or as a complement, the pixel (100) includes isolating wells extending on respective sides of the photosensitive structure (130) throughout the entire or at least a major part of the epitaxial layer to provide isolation from neighboring pixels of the image sensor.</p> |
