发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to improve a device property of a thin film transistor by preventing the deterioration of a surface roughness in a gate electrode. CONSTITUTION: A pixel region is defined by alternatively arranging a gate line(200) and a data line(500) on a substrate(100). A gate electrode(220) is connected to the gate line. A source electrode(520) is connected to the data line. A drain electrode(540) faces the source electrode. A semiconductor layer(400) is formed between the source electrode and the drain electrode. A pixel electrode(700) is connected to the drain electrode.</p> |
申请公布号 |
KR20130015069(A) |
申请公布日期 |
2013.02.13 |
申请号 |
KR20110076883 |
申请日期 |
2011.08.02 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
NAM, SEUNG HEE;YOO, SOON SUNG;KIM, NAM KOOK;MOON, TAE HYOUNG;LEE, KYU HWANG;YOUK, SEUNG HYUN |
分类号 |
H01L29/786;G02F1/136;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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