发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to improve a device property of a thin film transistor by preventing the deterioration of a surface roughness in a gate electrode. CONSTITUTION: A pixel region is defined by alternatively arranging a gate line(200) and a data line(500) on a substrate(100). A gate electrode(220) is connected to the gate line. A source electrode(520) is connected to the data line. A drain electrode(540) faces the source electrode. A semiconductor layer(400) is formed between the source electrode and the drain electrode. A pixel electrode(700) is connected to the drain electrode.</p>
申请公布号 KR20130015069(A) 申请公布日期 2013.02.13
申请号 KR20110076883 申请日期 2011.08.02
申请人 LG DISPLAY CO., LTD. 发明人 NAM, SEUNG HEE;YOO, SOON SUNG;KIM, NAM KOOK;MOON, TAE HYOUNG;LEE, KYU HWANG;YOUK, SEUNG HYUN
分类号 H01L29/786;G02F1/136;H01L51/50 主分类号 H01L29/786
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