发明名称 Semiconductor device reducing risks of a wire short-circuit and a wire flow
摘要 A semiconductor device includes a wiring substrate (12) having first (124) and second (125) connection pads on a main surface thereof, a first semiconductor chip (14) having first electrode pads (141), a second semiconductor chip (16) having second electrode pads (161) each of which has a size smaller than that of each of the first electrode pads (141), first wires (22) connecting the first electrode pads (141) with the first connection pads(124), and second wires (24) connecting the second electrode pads (161) with the second connection pads (125). The second wires (24) have wide width parts at first ends (241). The wide width parts (241) are connected the second connection pads (125) and the second wires (24) have second ends connected to the second electrode pads (161) via bump electrodes (30) which are smaller than the second electrode pads (161).
申请公布号 EP2557594(A1) 申请公布日期 2013.02.13
申请号 EP20120176963 申请日期 2012.07.18
申请人 ELPIDA MEMORY, INC. 发明人 FUJIWARA, SHORI
分类号 H01L23/49;H01L21/60;H01L25/065 主分类号 H01L23/49
代理机构 代理人
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