发明名称 Method of forming a semiconductor device and structure therefor
摘要 A method of forming a semiconductor device includes forming isolation trenches that are used to isolate some of the electrical elements such as transistors, diodes, capacitors, or resistors on a semiconductor die from other elements on the semiconductor die.
申请公布号 KR101232662(B1) 申请公布日期 2013.02.13
申请号 KR20060039581 申请日期 2006.05.02
申请人 发明人
分类号 H01L21/336;H01L29/78 主分类号 H01L21/336
代理机构 代理人
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