METHOD OF FORMING FINE PATTERNS FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fine pattern of a semiconductor device is provided to simplify a manufacturing process by removing a mask layer with poly silicon to reduce the number of mask layers. CONSTITUTION: An etched layer(210) and a hard mask layer(220) are formed on a substrate(200). A carbon containing film is formed on the hard mask layer. A carbon containing film pattern(230a) is formed by etching the carbon containing film. A spacer mask layer(260) including silicon nitride is formed on the carbon containing film pattern. A spacer is formed to cover the sidewalls of the carbon containing film pattern. A hard mask pattern is formed by etching the hard mask layer using the spacer as an etch mask.