| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve a connection failure of a conductive pattern due to excessive etch by forming a first insulation layer and a second insulation layer with different materials. CONSTITUTION: A first interlayer insulation layer(205) is formed on the upper side of a semiconductor substrate(201) with a source area(203). A laminate structure is formed on the upper side of the first interlayer dielectric layer. The laminate structure is formed by alternatively laminating a multilayered conductive layers(207a-207f) and multilayered second interlayer dielectric layers(209a-209f). A first insulation layer(213) is formed on the upper side of the laminate structure. An etch stop layer(215) is formed on the upper side of the first insulation layer.</p> |
