发明名称 |
Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same |
摘要 |
Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.
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申请公布号 |
US8372303(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US20070309694 |
申请日期 |
2007.07.26 |
申请人 |
LG CHEM, LTD.;OH MYOUNG HWAN;CHO SEUNG BEOM;NHO JUN SEOK;KIM JONG PIL;KIM JANG YUL |
发明人 |
OH MYOUNG HWAN;CHO SEUNG BEOM;NHO JUN SEOK;KIM JONG PIL;KIM JANG YUL |
分类号 |
C09K13/00;C03C15/00 |
主分类号 |
C09K13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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