发明名称 Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof
摘要 A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
申请公布号 US8373339(B2) 申请公布日期 2013.02.12
申请号 US20100982682 申请日期 2010.12.30
申请人 LG DISPLAY CO., LTD.;AHN BYUNG CHUL;LIM BYOUNG HO;CHOI BYEONG DAE 发明人 AHN BYUNG CHUL;LIM BYOUNG HO;CHOI BYEONG DAE
分类号 H01L29/10;H01L21/20;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L29/786 主分类号 H01L29/10
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