SHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A schottky barrier diode and a manufacturing method thereof are provided to reduce manufacturing costs and to simplify manufacturing processes by not requiring an additional ion implantation process and a heat treatment process. CONSTITUTION: A buffer layer(200) is formed on a substrate(100). An n-GaN layer(300) doped with aluminum is formed on the buffer layer. A GaN layer(400) doped with aluminum is formed on the n-GaN layer doped with aluminum. A first electrode(700) is formed on the GaN layer doped with aluminum. A second electrode(600) is formed on the other side of the substrate with the n-GaN layer doped with aluminum.