发明名称 Method for manufacturing display device
摘要 One object is to provide a method for manufacturing a display device in which shift of the threshold voltage of a thin film transistor including an oxide semiconductor layer can be suppressed even when ultraviolet light irradiation is performed in the process for manufacturing the display device. In the method for manufacturing a display device, ultraviolet light irradiation is performed at least once, a thin film transistor including an oxide semiconductor layer is used for a switching element, and heat treatment for repairing damage to the oxide semiconductor layer caused by the ultraviolet light irradiation is performed after all the steps of ultraviolet light irradiation are completed.
申请公布号 US8372664(B2) 申请公布日期 2013.02.12
申请号 US20100974263 申请日期 2010.12.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;TSUJI TAKAHIRO;MORIYA KOJI 发明人 TSUJI TAKAHIRO;MORIYA KOJI
分类号 H01L27/12;H01L21/66 主分类号 H01L27/12
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